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Trabzon Teknik Servis Beko Arçelik ve Grunding Marka Televizyon Besleme Kartındaki Sigortayı Attıran Transistör Test İşlemi ve KarşılığıDetaylı Bilgi İçin İn K15A60U Datasheet - N-Ch, Vdss=600V, MOSFET - Toshiba, TK15A60U datasheet, K15A60U pdf, K15A60U pinout, K15A60U manual, K15A60U schematic. TRONIC.LK is an Educational Electronic Store in Sri Lanka. K10A60D Summary of contents Page 1 D E 363 4 150 ° -55 to 150 °C stg Symbol Max Unit R 2.78 °C/W th (ch-c) R 62.5 °C/W th (ch- Ω TK10A60D www.DataSheet4U.com Unit Gate 2: Drain 3: Source JEDEC ― JEITA SC-67 TOSHIBA 2-10U1B Weight : 1.7 g (typ 2009-09-29 K10A60D datasheet, K10A60D datasheets, K10A60D pdf, K10A60D circuit : TOSHIBA - Switching Regulator Applications ,alldatasheet, datasheet, Datasheet search site for K10A60D Part No. (or abbreviation code) Note 4 Note 4: A line under a Lot No. identifies the indication of product Labels. [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK10A60D Switching Regulator Applications K10A60D Part No. (or abbreviation code) A line indicates Lead (Pb)-Free Finish . TK10A60D 3 2008-06-04 COMMON SOURCE Tc = 25°C PULSE TEST DRAIN-SOURCE VOLTAGE VDS (V) Toshiba K10A60D PDF : TOSHIBA Field Effect Transistor Silicon N Channel MOS Type / Switching Regulator Applications, K10A60D Datasheet, K10A60D pdf, K10A60D datasheet pdf, datenblatt, pinouts, data sheet, schematic Price: Canadian $2.70 (US $1.96 Approx.) TK10A60D N Channel MosFet • N Channel 600V 10A Mosfet • Sony 6-552-206-01• Marked K10A60D instead of TK10A60D• Price is Per One Transistor.• Condition : NEW• Brand : ™• Package : TO-220F• Toshiba Transistor K10A60D 10N60 Datasheet (PDF) 0.1.
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Transistor K10A60D MOSFET de canal N (Metal Oxide Semiconductor Field Effect Transistor), muito indicado para aplicações PWM ou para circuitos que necessitem de uma alta velocidade de comutação. O K10A60D possui encapsulamento TO220FP. K10A60D Datasheet(HTML) 1 Page - Toshiba Semiconductor : 1 / 6 page. TK10A60D. 2009-09-29. 1. TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π Switching Regulator Applications, TK10A60D datasheet, TK10A60D circuit, TK10A60D data sheet : TOSHIBA, alldatasheet, datasheet, Datasheet search site for Electronic Encuentra Transistor Mosfet K10a60d - Electrónica, Audio y Video en MercadoLibre.com.mx!
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Código: K10A60D Tipo de FET: MOSFET INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK10A60D5ITK10A60D5FEATURESLow drain-source on-resistance:RDS(on) Transistor K6a65d, Transistor K6a65d Suppliers and Manufacturers Transistor K6a65d, K10a60d K 10a60d K10 A60d K10a 60d K10a60 D K 1 0 A 6 0 D - R$ 12 TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK10A60D Switching Regulator Applications Unit: mm • Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 μA (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V K10A60D, produced by Toshiba Semiconductor and Storage, is a N-Channel MOSFET transistor in TO-220SIS Through Hole package. The features include 600V drain-source breakdown voltage, 10A (Ta) continuous drain current at 25°C ,4V @ 1mA gate-source threshold voltage. K10A60D is used in the 150°C (TJ) operating temperature range. Buy K10A60D TOSHIBA , Learn more about K10A60D Trans MOSFET N-CH 600V 10A, View the manufacturer, and stock, and datasheet pdf for the K10A60D at Jotrin Electronics.
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Switching Regulator Applications, K10A60D datasheet, K10A60D circuit, K10A60D data sheet : TOSHIBA, alldatasheet, datasheet, Datasheet search site for Electronic K10A60D, produced by Toshiba Semiconductor and Storage, is a N-Channel MOSFET transistor in TO-220SIS Through Hole package. The features include 600V drain-source breakdown voltage, 10A (Ta) continuous drain current at 25°C ,4V @ 1mA gate-source threshold voltage. K10A60D Datasheet, K10A60D PDF, K10A60D Data sheet, K10A60D manual, K10A60D pdf, K10A60D, datenblatt, Electronics K10A60D, alldatasheet, free, datasheet, Datasheets item 3 K10A60D TRANSISTOR TO-220F - K10A60D TRANSISTOR TO-220F. $6.09 +$2.61 shipping. item 4 TK10A60D Original New Toshiba Transistor K10A60D - TK10A60D Original New TK10A60D MOSFET.
The Part Number column shows representative part numbers only, which may not be available for sale in the precise form shown. Each Part Number constitutes a product family which may contain multiple associated product configurations. K10A600 Datasheet PDF, TK10A600 datasheet, K10A600 pdf, K10A600 pinout, K10A600 data, K10A600D circuit, K10A600 output, K10A600 schematic, K10A600 manual. K10A60D TK10A60D Components datasheet pdf data sheet FREE from Datasheet4U.com Datasheet (data sheet) search for integrated circuits (ic), semiconductors and other electronic components such as resistors, capacitors, transistors and diodes. substituto transistor k10a60d.
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K10A60D Datasheet, K10A60D PDF. Datasheet search engine for Electronic Components and Semiconductors.
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PRUEBAS DEL TRANSISTOR MOSFET ESTATICAS DINAMICAS, ESTE TRANSISTOR ES MUY UTILIZADO EN LAS FUENTES CONMUTADAS ya estamos dando clases de electronica por in Encontre Transistor Mosfet K10a60d - Componentes Eletrônicos no MercadoLivre.com.br. Descubra a melhor forma de comprar online. Aproveite o frete grátis pelo MercadoLivre.com.br! أخيرا تم اطلاق الدورة الجديدة دورة التصميم الالكتروني المحترف وليد عيسى هي دورة تختلف عن دورة The problem was no power. I checked the power board and found main fuse and FET transistor were bad.
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K10A600 Datasheet PDF, TK10A600 datasheet, K10A600 pdf, K10A600 pinout, K10A600 data, K10A600D circuit, K10A600 output, K10A600 schematic, K10A600 manual. Transistor K6a65d, Transistor K6a65d Suppliers and Manufacturers Transistor K6a65d, K10a60d K 10a60d K10 A60d K10a 60d K10a60 D K 1 0 A 6 0 D - R$ 12 TK10A50D Datasheet (PDF) 0.1. tk10a50d.pdf Size:197K _toshiba. TK10A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK10A50D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.62 (typ.) High forward transfer admittance: Yfs = 5.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 K10A60D Datasheet, K10A60D PDF, Replacement, Equivalent, Data sheets, TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) Bipolar Small-Signal Transistors: TK10A60D: Switching Regulator Applications: TK10A60D5 Bipolar Small-Signal Transistors: Search Partnumber : Start with "TK10A60D"-Total : 86 ( 1/5 Page) Topstek Inc. TK10A: Topstek Current Transducer: TOKO, Inc: TK10415: CERAMIC SPEAKER DRIVE AMPLIFIER: TK10416: DYNAMIC SPEAKER DRIVE AMPLIFIER: TK10417: POWER K10A60D datasheet, K10A60D PDF, K10A60D Pinout, Equivalent, Replacement - TK10A60D - Toshiba, Schematic, Circuit, Manual Código: K10A60D Tipo de FET: MOSFET INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK10A60D5ITK10A60D5FEATURESLow drain-source on-resistance:RDS(on) K10A60DR Datasheet PDF - 600V, N-Channel MOSFET, K10A60DR pdf, K10A60DR pinout, K10A60DR equivalent, K10A60DR schematic, K10A60DR manual, TK10A60DR. TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK10A60D Switching Regulator Applications Unit: mm • Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 μA (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V K10A60D Hoja de datos, K10A60D datasheet, Toshiba - TK10A60D, Hoja Técnica, K10A60D pdf, dataark, wiki, arduino, regulador, amplificador, circuito, Distribuidor K10A60D, produced by Toshiba Semiconductor and Storage, is a N-Channel MOSFET transistor in TO-220SIS Through Hole package. The features include 600V drain-source breakdown voltage, 10A (Ta) continuous drain current at 25°C ,4V @ 1mA gate-source threshold voltage.
dmt10n60 dmf10n60 dmk10n60 dmg10n60.pdf Size:2253K _1. 12N60 600V N-Channel Power MOSFET RDS(ON) 0.2. php10n60e.pdf Size:18K _philips. Philips Semiconductors Preliminary specification PowerMOS transistors PHP10N60E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High Encuentra Transistor K10a60d - Semiconductores en MercadoLibre.com.ve!